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savantic semiconductor product specification silicon npn power transistors 2SD1712 d escription with to-3pfa package complement to type 2sb1157 high transition frequency f t satisfactory linearity of h fe wide area of safe operation applications for high power amplifier applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current 5 a i cp collector current-peak 8 a t c =25 60 p c collector power dissipation t a =25 3 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD1712 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =3a ;i b =0.3a 2.0 v v be base-emitter on voltage i c =3a ; v ce =5v 1.8 v i cbo collector cut-off current v cb =100v; i e =0 50 a i ebo emitter cut-off current v eb =3v; i c =0 50 a h fe-1 dc current gain i c =20ma ; v ce =5v 20 h fe -2 dc current gain i c =1a ; v ce =5v 60 200 h fe -3 dc current gain i c =3a ; v ce =5v 20 c ob output capacitance i e =0 ; v cb =10v;f=1mhz 70 pf f t transition frequency i c =0.5a ; v ce =5v 20 mhz h fe-2 classifications q s p 60-120 80-60 100-200
savantic semiconductor product specification 3 silicon npn power transistors 2SD1712 package outline fig.2 outline dimensions (unindicated tolerance:0.30mm)

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